ZnO非欧姆陶瓷材料的介电和损耗特性  

Dielectric Properties and Resistive Currents of ZnO Nonohmic Materials

作　　者：李盛涛[1] 刘辅宜[1] 焦兴六[1] 

机构地区：[1]西安交通大学电气工程学院电气绝缘研究所

出　　处：《无机材料学报》1996年第1期90-96,共7页Journal of Inorganic Materials

摘　　要：本文研究了不同工艺条件制备的ＺｎＯ非欧姆陶瓷材料的介电和损耗特性，根据介电频谱和低温温谱，认为音频损耗机理是载流子跳跃传输，低温－１３８°Ｃ和－８７．５°Ｃ处的损耗机制是热离子极化．实验发现并理论推导了ＺｎＯ非欧姆陶瓷元件的阻性电流正比于其电容和压敏电压的乘积，这一关系可作为ＺｎＯ元件的质量控制手段．Dielectric properties and resistive currents of ZnO nonohmic materials prepared with different technical procedures were investigated. From the frequency and lower temperature dependences of the capacitance and dissipation factor tans, it is reasonable to suggest that dielectric losses of ZnO nonohmic elements in audio frequencyl around temperature -138°C and -87.5°C are caused by carrier hopping and thermal ionic polarization respectively. It is found that the resistive current of ZnO element is proportional to the product of its own capacitance and varistor voltage VimA. The relation can be used to evaluateheat dissipation of ZnO elements and as a diagnostic tool for the quality control in production.

关 键 词：非欧姆陶瓷 陶瓷 介电特性 氧化锌陶瓷 损耗特性 

分 类 号：TM28[一般工业技术—材料科学与工程] TQ174.758[电气工程—电工理论与新技术]