多孔硅制备条件对其电致发光特性的影响  

Effect of Preparation Conditions on Electroluminescence of Porous Silicon

作　　者：杨亚军[1] 李清山[1] 刘宪云[1] 张宁[1] 赵波[1] 郑学刚[1] 石明吉[1] 陈达[1] 王璟璟[1] 

机构地区：[1]曲阜师范大学物理工程学院,山东曲阜273165

出　　处：《电化学》2006年第2期210-213,共4页Journal of Electrochemistry

基　　金：山东省自然科学基金(Y2002A09)资助

摘　　要：应用蒸镀-阳极氧化法制备结构为ITO/PS/p-S i/A l的多孔硅电致发光器件,在7.5V电压下实现了数小时连续电致发光.实验表明,多孔硅电致发光峰位会随着阳极氧化电流密度的增大、腐蚀时间的延长以及HF酸浓度的降低而蓝移.欲制备工作电压较低、发光时间较长、发光效率较高的电致发光样品,则多孔硅制备时的阳极氧化应使用较低电流密度和较短的腐蚀时间.Electrically induced visible light emitting porous silicon devices with the structure of ITO/PS/p-Si/ Al were fabricated by evaporation-anodic oxidation method. The light emission last for a few hours under 7.5V forward bias conditions. It was shown that the electroluminescence （EL） peaks shifted to the blue with the increasing of current voltage, long light density and short e density, erosion time and solution concentration. In order to achieve samples with low driven emission time and high EL efficiency, porous silicon should be prepared under low current rosion time.

关 键 词：多孔硅(PS) 电致发光(EL) 光致发光(PL) 氧化铟锡(ITO) 

分 类 号：O613.72[理学—无机化学]