真空辐射加热基片的温度分布  

THE TEMPERATURE DISTRIBUTION IN A SUBSTRATE RADIATIVELY HEATED IN VACUUM

作　　者：李帅辉[1] 舒勇华[1] 唐锦荣[1] 樊菁[1] 

机构地区：[1]中国科学院力学研究所高温气体动力学重点实验室,北京100080

出　　处：《力学与实践》2006年第3期19-23,共5页Mechanics in Engineering

基　　金：中国科学院"十五"装备项目;国家自然科学基金项目(10205024和10502051)资助.

摘　　要：真空辐射加热下基片表面温度分布的均匀性是薄膜制备中的关键问题之一．采用数值计算和比色红外测温两种方法,研究了作者自行研制的真空辐射加热器(IMCAS-VRH)的性能．利用IMCAS—VRH加热直径6in的单晶硅基片,当电功率为3860W时,基片表面平均温度为1093K,整个基片上的温度变化的测量值约为6 K．基片表面温度分布的计算结果与测量数据符合得很好,进一步的计算分析表明钼丝对辐射的遮挡效应、隔热屏和基片热传导等对基片温度分布均匀性有重要影响．How to reach a uniformly distributed temperature in a substrate radiatively heated in vacuum is one of the major issues in the thin film deposition. In this article, numerical calculations and infrared colorimetric measurements of temperature are made to analyze a radiation heater used in vacuum, named as IMCAS-VRH. IMCAS-VRH is used to heat a monocrystal silicon substrate with a diameter of 6 inches, under an electric power of 3 860 W. The mean temperature over the substrate is 1093 K, while the whole temperature variation is within 6 K. The calculated temperature distributions agree well with the measured data, and further computational analysis shows that the Mo filaments＇ shielding from radiation, the thermal insulation plates, and the thermal conductivity of the radiation cavity all affect significantly either the mean temperature or the temperature distribution uniformitv in the substrate.

关 键 词：薄膜气相沉积 真空辐射加热 基片温度分布 

分 类 号：O484[理学—固体物理]