BaBrCl:Ce^(3+)光存储性能的研究  

Study of Optical Storage in Ce^(3+) Doped BaBrCl

作　　者：董金凤[1] 王永生[1] 孟宪国[1] 王丽辉[1] 

机构地区：[1]北京交通大学理学院,北京100044

出　　处：《北京交通大学学报》2006年第3期34-36,42,共4页JOURNAL OF BEIJING JIAOTONG UNIVERSITY

基　　金：国家自然科学基金资助项目(10274001);教育部高校优秀青年教师奖励计划项目;教育部重点资助项目

摘　　要：采用高温固相反应法制备了Ce3+掺杂的BaBrCl材料.研究了样品的荧光光谱,经X射线辐照前后的吸收光谱及差吸收谱(DAS).首次在BaBrCl:Ce3+中发现光激励发光.发射峰及光激励发光峰均位于~390 nm;DAS为500~750 nm的宽带谱,与BaFX:Eu2+(X=Cl,Br)相比,该吸收带与He_Ne激光器(633 nm),或廉价、小巧、使用方便的半导体激光器的波长更为匹配.表明BaBrCl:Ce3+有望成为一类新型的X射线存储材料.The material BaBrCI doped with Ce^3＋ was prepared by solid state reaction method. The photolurninescence of BaBrCl.Ce^3＋ was investigated. The optical absorption spectra and the corresponding difference absorption spectra （DAS） were studied. The photostimulated luminescence of the material was observed in this phosphor for the first time. Both photoluminescence spectrum and photostimulated luminescence spectrum show luminescence peak at 390 nm. The corresponding DAS show two bands in a region from 550 nm to 750 nm. Compared with BaFX：Eu^2＋ （X = Cl, Br）, the absorption band of this sample matches the He-Ne laser（633 nm）,or even the cheaper, more portable and more convenient semiconductor laser better. The results indicate that BaBrCl.Ce^3＋ has a potential to be a promising X- ray storage phosphor.

关 键 词：BaBrCl:Ce^3+ 光存储 电子俘获 稀土 

分 类 号：O482.3[理学—固体物理]