氦在钛靶及Al_2O_3中的行为研究  

Behaviour of helium in titanium target and Al_2O_3

作　　者：魏澎[1] 赵国庆[1] 赖祖武[1] 宋哲明[1] 罗泗维 

机构地区：[1]复旦大学,中国工程物理研究院北京研究生部,中国工程物理研究院应用电子学研究所

出　　处：《核技术》1996年第8期460-465,共6页Nuclear Techniques

摘　　要：报道了利用质子增强背散射和扫描电镜等方法，研究不同工艺制作的钛膜靶和不同纯度的Ａｌ２Ｏ３中注入的４Ｈｅ在室温下的行为．研究结果表明，离子束增强淀积新工艺制备的钛膜与基体的结合强度优于原来热蒸发镀制的钛靶；氦在Ａｌ２Ｏ３与在钛靶中具有不同的释放机制；钛靶的起泡注入剂量在４×１０１７－７×１０１７Ｈｅ／ｃｍ２之间，而且起泡剂量与泡破裂剂量相差不大；较之新工艺制备的钛靶，氦在Ａｌ２Ｏ３中更不易形成氦泡．At room temperature, the proton enhanced backscattering technique and scanning electron microscopy are used to study the behaviour of implanted helium in titanium forget with different manufacturing process and alumina with different purity. The result proves that adhesion of the titanium film Prepared by ion.beam enhanced deposition(BED) is superior to that of the film made by vaporization.The release mechanism of helium in titanitum target and alumina is different.Compared with the titanium target made by IBED,helium in alumina is difficult to form bubbles.For titanium target,the implanted He dose for blistering is 4×1017-7×1017He/cm2,and this dose is very close to the dose value that makes flabes.

关 键 词：氦 深度分布 钛靶 氦泡 三氧化二铝 

分 类 号：TL503.92[核科学技术—核技术及应用]