衬底剥离的量子阱红外探测器研究(英文)  

STUDY ON SUBSTRATE-LIFTED-OFF QUANTUM WELL INFRARED PHOTODETECTOR

作　　者：甄红楼[1] 李宁[1] 江俊[1] 徐文兰[1] 陆卫[1] 黄绮[2] 周均铭[2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家实验室,上海200083 [2]中国科学院物理研究所,北京100080

出　　处：《红外与毫米波学报》2006年第3期161-164,共4页Journal of Infrared and Millimeter Waves

基　　金：SupportedbyChineseNationalKeyBasicResearchSpecialFund(2004CB619004),NationalScienceFoundation(10234040,60476040),ShanghaiScienceandTechnologyFoundation(02DJ14066)

摘　　要：对用MBE生长的GaAs/A lGaAs量子阱材料进行了衬底剥离,在此基础上制备了单元器件并测量了器件的黑体响应率以及光电流响应.实验解决了衬底剥离及器件制备中的工艺问题,研究了衬底剥离对材料及器件性能的影响以及用这种方法制备器件的可行性.结果表明选择腐蚀法是一种有效的衬底剥离方法,用这种方法得到的多量子阱薄膜材料仍具有较好的红外探测性能,为进一步实验提供了依据.Epitaxial films of GaAs/AlGaAs multi-quantum wells were lifted-off from its grown substrate and transferred to a Si substrate, a typical infrared optical window material. The lifted-off sample was fabricated into quantum well infrared photodetector （ QWIP）. The responsivity and photocurrent spectrum of the lifted-off QWIP is shown in similar to that of QWIP processed from the as-grown wafer. It demonstrates that the lift-off process can be used in QWIP process without device performance degradation. The lifted-off process can provide a new possibility to integrate the QWIP devices with other optical device to enhance the detector performance.

关 键 词：衬底剥离 量子阱红外探测器 光电流谱 介电函数 

分 类 号：O469[理学—凝聚态物理] O471.4[理学—电子物理学]