5．8GHz／0．18μm低噪声放大器噪声分析  

Analyze Noise of 5.8 GHz/0.18 μm CMOS Integrated Low Noise Amplifier

作　　者：陈建新[1] 王文静[1] 袁志鹏 张弛 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022 [2]北京嵌入式系统重点实验室,北京100022

出　　处：《北京工业大学学报》2006年第5期396-399,共4页Journal of Beijing University of Technology

基　　金：国家自然科学基金(60476034).

摘　　要：为了优化设计的5．8 GHz低噪声放大器(LNA)后仿真的各项性能指标,分析了LNA各部分寄生效应对整个电路噪声系数和增益的影响,提出了电路设计和版图设计中应采取的各种措施,使优化后的后仿真结果与前仿真结果基本一致．在考虑MOS管栅电阻和栅感应噪声电流的情况下,后仿真噪声系数为1．6 dB,前向增益为13．7 dB,功耗为8．3 mW,达到了802．11a系统集成的要求．最后给出了LNA版图和后仿真结果．To optimize the post simulation result of 5.8 GHz low noise amplifiers（LNA）, we analyzed the parasitic effect on gain and noise figure （NF）. We took some measures in circuit design and layout design, which improved the post simulation result. The post simulation result is similar to pre simulation. In the simulation, we considered the effect of gate resistor and gate induced current noise. The LNA possesses a 13.7 dB gain with 1.6 dB NF and 8.3 roW. It reached the requirement of 802.11a. At last, we provided the layout and post simulation of the LNA.

关 键 词：低噪声放大器 无线局域网 集成电路的噪声 电感 CMOS集成电路 

分 类 号：TN722.3[电子电信—电路与系统]