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作 者:钟澄[1] 蒋益明[1] 罗宇峰[1] 廖家兴[1] 吴玮巍[1] 李劲[1]
出 处:《物理化学学报》2006年第6期696-700,共5页Acta Physico-Chimica Sinica
基 金:上海市科委纳米专项(0452nm004);国家自然科学基金(10374015;50571027);国家重点基础研究发展计划项目(2002CB613504)资助
摘 要:建立了两种新的薄膜反应动力学表征方法,即透射光谱法和方块电阻法,以克服传统动力学表征手段在薄膜体系氧化与络合反应过程中应用的局限性.以透射光谱为表征手段,得到了Ag/TCNQ(四氰基对醌二甲烷)金属有机双层薄膜的络合反应动力学曲线;以方块电阻为表征手段,得到了Cu薄膜的氧化反应动力学过程.Two new methods were developed for characterizing the kinetics of the complexation and oxidation processes of the thin films by using transmission spectrum and sheet resistance. Ag/TCNQ(7, 7, 8, 8-tetracyanoquino-dimethane)bi-layer films and copper films were prepared on glass substrate by vacuum deposition. The complex kinetics of Ag/TCNQ bi-layer thin films was studied via the transmission spectrum. The oxidation kinetics of the copper thin films was studied via sheet resistance, which increased during the process. The results suggested that these two methods can be used to characterize the kinetics of the reaction process of thin films.
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