自组生长的硅纳米管的稳定性研究  

Research on the stability of the self-assembled silicon nanotubes

作　　者：唐元洪[1] 裴立宅[1] 陈扬文[1] 郭池[1] 

机构地区：[1]湖南大学材料科学与工程学院,长沙410082

出　　处：《物理》2006年第6期466-468,共3页Physics

基　　金：国家高等学校博士点基金(批准号:20040532014);教育部新世纪优秀人才基金资助项目

摘　　要：文章作者的研究小组在世界上首次合成自组生长的硅纳米管(SiNTs)后,对它的稳定性研究又获得进展.采用5wt%的HF酸对自组生长的硅纳米管的稳定性进行了研究,研究表明HF酸可以去除硅纳米管的氧化物外层,只剩下晶体硅纳米管,说明所得到的硅纳米管是一种稳定结构,因而使其应用研究开发成为可能.研究表明,硅纳米管的稳定性与其生长形成过程密切相关.We report the first successful synthesis of self-assembled silicon nanotubes （SiNTs）. The stability of these nanotubes was studied by etching with 5 wt% HF acid. It was found that the silicon oxide outer layer was removed by HF acid leaving behind pure crystalline silicon nanotubes, showing that the self-assembled silicon nanotubes are stable and thus opening up possibilities for research into applications of the silicon nanotubes. The results show that the stability of silicon nanotubes is closely related to their formation and growth process.

关 键 词：自组生长的硅纳米管 稳定性 腐蚀 生长机理 

分 类 号：TB383.1[一般工业技术—材料科学与工程]