PROM器件中Ni-Cr熔丝的设计  

Design of Ni-Cr fuse used in PROM devices

作　　者：孙承松[1] 张丽娟[1] 陈桂梅[2] 袁凯[2] 

机构地区：[1]沈阳工业大学信息科学与工程学院,沈阳110023 [2]东北微电子研究所,沈阳110032

出　　处：《沈阳工业大学学报》2006年第3期315-317,共3页Journal of Shenyang University of Technology

摘　　要：介绍了应用在PROM器件中的Ni-Cr熔丝电阻的设计.熔丝是决定PROM器件稳定性的关键元件.Ni-Cr薄膜材料有良好的半导体加工特性和温度稳定性.通过热学分析和测试实验,得到相关数据,设计出熔丝形状以及三维尺寸.再根据此集成电路器件的整体版图布局设计出可应用到PROM中的Ni-Cr熔丝.采用磁控溅射方法,通过控制工艺条件得到所需的薄膜厚度,经光刻形成所需图形.通过产品的读取测试实验,取得了良好的效果.The design of Ni-Cr fuse resistor used in PROM Deviceis introduced. The fuse is a crucial factor affecting the stability of PROM devises. Ni-Cr thin film has excellent characteristics of semiconductor process and good temperature stability. Through calorifics analysis and experiments, relevant useful data can be obtained, fuse＇s shape and its three-dimension size can be designed. The Ni-Cr fuse must designed match with the whole layout design of PROM. Magnet-controlled sputtering approach was adopted to obtain thin film with the suitable thickness, and then, the graph of design is formed by photo etching. The expectant results are gained with the read operations.

关 键 词：Ni—Cr电阻 熔丝 可编程只读存储器 集成电路 设计 

分 类 号：TN710[电子电信—电路与系统]