锡基氧化物薄膜的制备与电化学性能  

Preparation of tin-based oxides thin films and its' electrochemical properties

作　　者：赵胜利[1] 文九巴[1] 李谦[1] 傅正文[2] 秦启宗[2] 

机构地区：[1]河南科技大学材料学院,洛阳471003 [2]复旦大学化学系,上海200433

出　　处：《材料研究学报》2006年第3期262-266,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金20203006国家重大基础研究计划ZM200103B01河科大青年科研基金2004QN010资助项目.

摘　　要：制备了SnOx(1(?)x(?)2)薄膜,研究了氧化温度对薄膜形貌、结构及性质的影响．结果表明,SnOx薄膜表面光滑、厚度均匀且致密,由纳米尺寸、分布均匀的晶形颗粒组成,颗粒粒径随着氧化温度的升高而逐渐变大;SnOx薄膜电极初始可逆容量随着氧化温度的升高而降低,首次容量损失则随氧化温度的升高而增大．在温度为600℃氧化2 h,SnOx薄膜的可再充放电性能最好．A dense tin-based oxide （SnOx） thin film with smooth surface and uniform thickness was fabricated by vacuum thermal evaporation of Sn and subsequent thermal oxidation in oxygen ambient, and the influence of oxidation temperature on its morphology, structure and properties was investigated. The results showed that SnOx film is composed by nanocrystalline grains with homogeneous distribution and the grain size increases with oxidation temperature. In first cycle, the reversible capacity of this SnOx film decreases and capacity loss increases with the oxidation temperature. At 600 ℃ oxidation temperature for 2 h, SnOx film possesses best rechargeable property.

关 键 词：无机非金属材料 锡基氧化物薄膜 真空蒸发 热氧化 

分 类 号：O484[理学—固体物理] TM911[理学—物理]