Fe和Fe_3O_4硫化制备的FeS_2薄膜的性能  

Properties of the FeS2 films sulfurized from the precursive Fe and Fe3O4

作　　者：刘艳辉[1] 侯玲[1] 范多旺[2] 汪洋[2] 孟亮 

机构地区：[1]浙江大学金属材料研究所,杭州310027 [2]兰州交通大学光电子技术和智能控制重点实验室,兰州730070

出　　处：《材料研究学报》2006年第3期300-304,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金50071056资助项目.

摘　　要：用溅射Fe和电沉积Fe3O4先驱体硫化制备出FeS2薄膜,研究了不同先驱体对硫化过程和FeS2薄膜性能的影响．结果表明,两种先驱体结晶成的FeS2能够在一定程度上保留先驱体形貌特征．Fe生成FeS2的热力学驱动力比较高,虽然可能生成FeS的过渡相;Fe硫化生成的薄膜平整致密,晶粒生长比较充分,尺寸较大,其禁带宽度接近理论值．Fe3O4硫化生成FeS2 的热力学驱动力较低,生成的薄膜表面疏松多孔,晶粒细小;薄膜的晶界等面缺陷比例较大和几何连续性较低使其电阻率较高、禁带宽度和载流子迁移率低于Fe膜硫化FeS2薄膜．Polycrystalline FeS2 thin films were prepared by sulfurizing the sputtered Fe films and electrodeposited Fe3O4 films. The effects of different precursive films on the evolution, microstructure and properties of the FeS2 films were investigated. The surface morphology of the precursive films is basically retained in the sulfurization reaction. The transformation from Fe to FeS2 in sulfurizing process has higher thermodynamic driving force although it is possible to produce the FeS intermediate phase. The FeS2 films obtained by sulfurizing the Fe films have the smooth and compact morphology, coarse crystallites, and approximately normal energy gap. The sulfurization process of Fe3O4 has lower thermodynamic driving force and obtained FeS2 films have the loose and porous morphology and fine crystallites. Higher density of grain boundary and discontinuity in the FeS2 films obtained by sulfurizing Fe3O4 films induce higher electrical resistivity, smaller energy gap and lower carrier mobility than that by sulfurizing the Fe films.

关 键 词：无机非金属材料 FeS2薄膜 光学性能 电学性能 

分 类 号：TN304[电子电信—物理电子学]