ZnO-B_2O_3-SiO_2系统低介陶瓷的烧结工艺研究  

Sintering Process in the Low Dielectric Constant Ceramic System ZnO-B_2O_3-SiO_2

作　　者：庞京涛[1] 郑金标[1] 吴纬[1] 

机构地区：[1]华东理工大学无机材料学院,上海200237

出　　处：《硅酸盐通报》2006年第3期25-28,共4页Bulletin of the Chinese Ceramic Society

摘　　要：通过热分析确定基本的的烧结温度制度，并且调整烧结工艺参数使粉料在不同的条件下进行烧结，通过对烧成后的样品的表观性能、介电性能和微观结构的分析，探讨了不同烧结制度对于ZnO-B2O3-SiO2系统的介电性能的影响。结果表明：该陶瓷系统致密化过程主要发生在900～1050℃之间，采用最高烧结温度1050℃，保温时间为60min．快速冷却（-20℃／min）的工艺烧成的陶瓷，致密性好，晶粒分布均匀且粒径大小适中，具有良好的介电性能（εr=4．75，tgσ=9．001，1MHz）。The process of sintering the low dielectric constant ceramic system ZnO-B2O3-SiO2 has been investigated. Through thermal analysis the basic sintering mode for this system was concluded. Then the samples were sintered in different mode. Interior structure of the sintered samples were studied by SEM. The effect of different sintering system on dielectric properties of the system was mainly discussed. The result indicates that the high quality, including good compact degree and good dielectric characteristics （εr=4.75, tgσ=0. 001,1MHz） could be obtained by the sintering system , as follows： sintering temprature is 1050℃ for 60 minutes, and rapid temperature descending（-20℃/min） .

关 键 词：低介电陶瓷 烧结工艺 ZnO-B2O3-SiO2系统 

分 类 号：TQ174.758[化学工程—陶瓷工业] TU522.19[化学工程—硅酸盐工业]