Ⅲ-V族半导体纳米材料的制备与尺寸控制  

Synthesis and Dimension Control of Nanometer-Sized Ⅲ-Ⅴ Semiconductors

作　　者：尹文艳[1] 杨合情[1] 宋玉哲[1] 万秀琴[1] 任荣贞[1] 

机构地区：[1]陕西师范大学化学与材料科学学院,西安710062

出　　处：《硅酸盐通报》2006年第3期116-123,共8页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(20443006;20573072);陕西省自然科学基金(2003E.06).

摘　　要：论述了Ⅲ-V族半导体纳米材料的制备与尺寸控制,其制备法分为物理法和化学法。物理法包括离子注入法、溅射法和激光烧蚀法,化学法包括高温有机液相合成法、有机溶剂热法、水热法和溶胶-凝胶法等。其中高温有机液相合成法较易制备尺寸均一、稳定的半导体纳米晶,有机溶剂热法、水热法和溶胶-凝胶法设备简单、反应条件温和,具有广阔的应用前景。The preparation and dimension control methods of nanometer-sized Ⅲ-Ⅴ semiconductors were discussed in this review, including physical and chemical methods. The former includes ion implantation, co-sputtering and laser ablation, the latter includes high-temperature organic solvent process, organic solvothermal synthesis, hydrothermal route, sol-gel method, etc. To some extent, the high-temperature organic solvent process relatively allows us to produce uniform and stable nanocrystallites, the organic solvothermal synthesis, hydrothermal route and sol-gel method might offer opportunities for both fundamental research and technological applications because of the simplicity and practicability of these routes.

关 键 词：Ⅲ-Ⅴ族半导体 纳米材料 合成 尺寸控制 

分 类 号：TQ153[化学工程—电化学工业] TB383[一般工业技术—材料科学与工程]