不同氧分压下电子束蒸发氧化锆薄膜的特性  

Characters of ZrO_2 films deposited by electron beam evaporation at different oxygen partial pressure

作　　者：张东平[1] 邵淑英[2] 黄建兵[2] 占美琼[2] 范正修[2] 邵建达[2] 

机构地区：[1]深圳大学理学院应用物理系,广东深圳518060 [2]中国科学院上海光学精密机械研究所光学薄膜技术研究与发展中心,上海201800

出　　处：《光电工程》2006年第6期37-40,52,共5页Opto-Electronic Engineering

基　　金：深圳大学科研启动基金资助课题(200617)

摘　　要：在不同的氧分压下用电子束热蒸发的方法制备了氧化锆薄膜。用扫描探针显微镜、X射线衍射仪和分光光度计分别对薄膜的表面粗糙度、微结构和透射谱等特性进行了表征。实验发现,薄膜沉积中氧分压与薄膜性质及微结构有密切的关系。当氧分压由3.0×10-3Pa升高到11×10-3Pa,薄膜的表面粗糙度由3.012nm降低到1.562nm,而薄膜的折射率由2.06降低到2.01。此外,X射线的衍射还发现,薄膜是以四方相为主多相共存的,随着氧分压的增加,特征衍射峰强度逐渐减弱,最后完全变成非晶。ZrO2 films were prepared by electron beam evaporation at different oxygen partial pressure. The film properties such as surface roughness, microstructure and transmission spectra were characterized by using Scanning Probe Microscopy （SPM）, X-ray diffraction and spectrophotometer respectively. The results indicate that the film properties and microstructure correlate with the oxygen partial pressure in deposition process. When oxygen partial pressure increased from 3.0×10^-3Pa to 11×10^-3Pa, the surface roughness decreased from 3.012nm to 1.562 nm, and the refractive index decreased from 2.06 to 2.01. X-ray diffraction results indicate that the films consist of many phases and tetragonal phase is the dominant phase. With the increase of the oxygen partial pressures, the intensity of the character diffraction peak decreases gradually until it changes into amorphous at last.

关 键 词：氧化锆薄膜 氧分压 表面迁移率 薄膜特性 

分 类 号：O484.1[理学—固体物理]