低压压敏陶瓷烧成过程中的温度因素研究  

A Study on Temperature Effect on Low-voltage Varistor Ceramics Sintering

作　　者：王立惠[1] 甘国友[1] 严继康[1] 

机构地区：[1]昆明理工大学材料与冶金工程学院,云南昆明650093

出　　处：《云南冶金》2006年第3期52-56,共5页Yunnan Metallurgy

基　　金：云南省科技攻关项目(2002GG09)

摘　　要：通过对低压压敏陶瓷烧成过程中的温度进行研究,并对电性能和微观结构进行对比分析,得到了ZnO-PbO系低压压敏陶瓷烧结过程中的最佳烧成温度、升温速率和保温时间,分别为:烧成温度1000℃、升温速率3℃/min、保温时间2h。并结合微观结构及电性能,测试分析和探讨了其影响机理。By studying the temperature during the sintering of low-voltage varistors Ceramics, analyzing its electrical properties and microstructure, the best firing temperature, rising speed of temperature and heat preservation time for sintering ZnO-PbO low-voltage varistors Ceramics are obtained. The proper parameters are as follows： the firing temperature is 1200℃, temperature raising speed is 3℃/min, heat preservation time is 2h. The mechanism of those effects on sintering are also analyzed according to the electrical and micro-structural testing result.

关 键 词：ZnO—PbO压敏陶瓷 低压压敏 烧成过程 电性能 微观结构 

分 类 号：TF12[冶金工程—粉末冶金]