Si含量对电弧沉积TiAlSiN薄膜性能的影响  

Influence of Si content on properties of TiAlSiN films prepared with arc ion plating

作　　者：秦聪祥[1] 曾鹏[1] 胡社军[1] 汝强[1] 吴键[1] 

机构地区：[1]广东工业大学材料与能源学院,广州510643

出　　处：《电镀与涂饰》2006年第6期15-17,共3页Electroplating & Finishing

基　　金：国家自然科学基金资助项目(50271019)

摘　　要：利用等离子体辅助电弧沉积技术制备了不同成分的TiAlSiN多元薄膜,并研究了Si含量对薄膜组织结构、显微硬度和耐磨性的影响。XRD物相分析表明:薄膜主要由AlN和TiN组成。随着膜层中Si含量的增加,薄膜的结构由明显的柱状晶转变为致密的玻璃态结构,显微硬度逐渐提高,耐磨性能得到明显改善。TiAISiN films with different Si content were prepared with arc ion plating. The influences of Si content on microhardness, microstructure and wear resistance were studied. The XRD analysis shows that the fill is composed of TiN and AIN. With the Si content increasing, the microstructure changes from obvious prismatic to compact glassy state, the microhardness of the film increases gradually and the wear resistance of TiAISiN improves remarkably.

关 键 词：TiAlSiN 电弧沉积 显微硬度 耐磨性 

分 类 号：TG174[金属学及工艺—金属表面处理] TQ153[金属学及工艺—金属学]