硅系太阳电池表面钝化技术比较  

Comparison of Surface Passivation Schemesfor Silicon Solar Cells

作　　者：王涛[1] 王正志[1] 

机构地区：[1]国防科技大学自动化学院,长沙410073

出　　处：《半导体技术》2006年第7期506-508,共3页Semiconductor Technology

摘　　要：通过对硅片的少数载流子有效寿命、硅太阳电池的反射损失和光谱响应这三个方面的研究,比较了目前主要的硅太阳电池表面钝化技术,对这些钝化技术的优缺点进行了分析和评价。从上述三个方面的比较可以看出,RTO/SiNx堆叠钝化技术在提高硅太阳电池性能上是最优的,具有良好的应用前景。The main surface passivation methods for silicon solar cells at present were compared according to effective lifetime of minority carrier in Si wafers, reflection losses and spectral response of silicon solar cells. The advantages and disadvantages of these surface passivation technologies are analysed and estimated. The comparisons revealed that RTO/SiNx stacks was the optimal passivation method for improving performance of silicon solar cells with wonderful future in applications.

关 键 词：钝化 少数载流子有效寿命 光谱响应 

分 类 号：TN305.5[电子电信—物理电子学]