超低压差线性稳压器的带隙基准电路设计  

Design of a Bandgap Voltage Reference for Very Low-Dropout Line Voltage Regulator

作　　者：余华[1] 邹雪城[1] 陈朝阳[2] 

机构地区：[1]华中科技大学电子与科学技术系,武汉430074 [2]华中科技大学图像识别与人工智能研究所,图像处理与智能控制国家重点实验室,武汉430074

出　　处：《半导体技术》2006年第7期542-545,548,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(90207020)

摘　　要：设计了一种采用电流反馈及电阻分压技术,输出可调的,用于单片集成超低压差的CMOS线性稳压器的高性能带隙基准电压电路。它可产生1～1.2217V多个电压基准;当温度从-40～125℃变化时,温度系数为23×10-6/K;具有较高的电源抑制比(PSRR),其值为78dB。输入电压在2.5～6V变化时,基准电压的变化范围为1.221685±0.055mV,该电路还可为其它电路模块提供PTAT电流。A super performance bandgap voltage reference for ultra low-dropout CMOS line voltage regulator with adjustable output was presented, which generated a wide range voltage reference from 1V to 1.2217V and had a low temperature coefficient of 2.3＊10-5/K over the temperature variation using the current feedback and resistive subdivision. In addition, the PSRR （power supply rejection ration） of the proposed bandgap voltage reference was 78dB. When supply voltage varied from 2.5V to 6V, output reference VREF was 1.221685 ±0.055mV. A PTAT （proportional to absolute temperature） current to bias other circuit module was generated too.

关 键 词：带隙电压基准 超低压差 温度系数 电源抑制比 

分 类 号：TN432[电子电信—微电子学与固体电子学]