ZnO:Al透明导电薄膜的制备及其特性分析  

Research on Preparation and Properties of Transparent Conductive ZnO:Al Thin films

作　　者：徐艺滨[1] 杜国同[1] 刘维峰[1] 杨天鹏[2] 王新胜[1] 

机构地区：[1]大连理工大学三束材料改性国家重点实验室,大连116024 [2]吉林大学集成光电子学国家重点实验室,长春130023

出　　处：《人工晶体学报》2006年第3期569-572,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金资助项目(No.60307002);吉林大学创新基金

摘　　要：采用射频磁控溅射工艺在玻璃衬底上制备出c轴择优取向的ZnO:A l(AZO)透明导电薄膜,靶材为AZO(2%质量分数A l2O3)陶瓷靶。对在不同溅射功率下沉积出来的薄膜运用X射线衍射(XRD)、可见光区透射谱、四探针方法分别进行结构和光电特性的表征。得出在200W下沉积的膜性能最好,可见光区平均透过率达到89%以上,电阻率最低为9.3×10-4Ω.cm。Al-doped ZnO thin films were deposited on the glass substrate by RF magnetron sputtering with ZnO target mixed with Al2O3 （2wt%）. The effects of RF power on the structural, electrical and optical properties of AZO film were investigated. X-ray diffraction spectrum showed that the AZO film with the hexagonal crystal structure was polycrystalline and had a strongly preferred orientation of c axis. The visible transmittance of above 89 % and the minimum specific resistance of 9.3 × 10^-4 Ω· cm were obtained.

关 键 词：射频磁控溅射 透明导电薄膜 AZO膜 

分 类 号：TN304[电子电信—物理电子学]