耐辐射优质石英晶体的生长  

Growth of Irradiation-resistant Quartz Crystals

作　　者：姜付义[1] 杜伟[2] 秦连杰[2] 翟剑庞[1] 杨长红[1] 陈焕矗[1] 韩建儒[1] 

机构地区：[1]山东大学晶体材料国家重点实验室,济南250100 [2]烟台大学环境与材料工程学院,烟台264005

出　　处：《人工晶体学报》2006年第3期666-668,659,共4页Journal of Synthetic Crystals

摘　　要：在水热条件下,我们利用三次再结晶的方法,生长了耐辐射优质石英晶体。随着再结晶次数的增加,晶体中的杂质浓度和缺陷浓度明显降低,晶体的耐辐射性能明显提高。High quality irradiation-resistant quartz crystals have been hydrothermally synthesized by a method of thrice crystallization. The concentration of impurity and defects in the crystals decreased dramatically, and the capability of irradiation-resistant improved synchronously as the increase of recrystallization times.

关 键 词：石英晶体 耐辐射 水热生长 

分 类 号：O782[理学—晶体学]