基于倍增技术的超低压高精度CMOS开关设计  

Design for high reliability and precision of switch of low-voltage,switched-capacitor circuits

作　　者：郑金鹏[1] 张生才[1] 姚素英[1] 徐江涛[1] 李树荣[1] 卜春雨[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072

出　　处：《哈尔滨工业大学学报》2006年第6期928-930,956,共4页Journal of Harbin Institute of Technology

基　　金：天津市科技攻关基金

摘　　要：设计一种能够工作在超低电源电压下的CMOS开关.该结构运用电压倍增器获得高压,此高压使开关产生的恒定大跨导和大信号摆幅能够在低压电路中传输信号,虚拟开关提高了信号传输精度.在分析电路工作机理的基础上,结合0.35μm标准工艺模型优化了电路参数.合理的电路结构设计和版图设计增加了电路的使用寿命.理论分析和Hsp ice模拟结果表明:该结构能够在低于1 V电源电压下工作,虚拟开关的应用使信号传输精度从69%提高到99.7%.该结构实现了低压下高精度的模拟开关设计.A CMOS switch which can work in ultra low power supply is designed. A large conductance and large signal swing can be obtained with the application of clock multiplier, which structure can be used to transfer signals in the circuit with extremely low supply voltage. Based on the analysis of the mechanism of the circuit, the circuit parameters are optimized using 0. 35um standard model. The circuit is simulated with Hspice to validate its performance. Reasonable circuit structure and layout design prolong the life time of the circuit. The theory analysis and simulation results indicate that the structure can work in low power supply less than 1V and the application of dummy switch increases the precision of signal transferred from 69% to 99.7%. This circuit offers a solution to analog switch in low power supply circuit.

关 键 词：高精度 CMOS开关 信号摆幅 自举电路 

分 类 号：TN713[电子电信—电路与系统] TN432