DDDMOS特性研究与建模  

Study of DDDMOS Characteristics and Modeling

作　　者：管小进[1] 王子欧[1] 帅柏林[1] 

机构地区：[1]苏州大学电子信息学院,江苏苏州215021

出　　处：《苏州大学学报（工科版）》2006年第3期9-13,共5页Journal of Soochow University Engineering Science Edition (Bimonthly)

基　　金：国家自然科学基金资助(编号60406001)

摘　　要：从TCAD实验出发,研究Double Diffused Drain MOSFET(简称DDDMOS)漂移区电阻与终端电压的非线性关系以及大电流效应等;以单位面积下漂移区自由载流子浓度为基础,得出漂移区电阻的解析模型。DDDMOS可以简化成低压MOSFET与漂移区电阻的串联网络,结合低压MOSFET模型和漂移区电阻模型,求解等效网络得出DDDMOS完整的模型。该模型在不同的电压区域都能够较好地反应TCAD模拟结果。Started with TCAD simulation, investigates the drift drain resistance model with the gate and drain biases, and describes the high current behavior of a Drift Drain MOSFET （normally called DDDMOS）. The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region. The DDDMOS can be simplified as a simple circuit, made by the series connection of a low voltage MOS transistor which can be modeled with standard industry model and a bias-dependent resistor, whose macro-model can be obtained from the derived drift drain resistor model. Solving this series circuit, a complete DC model of the DDDMOS transistor is derived whieh can reflect the TCAD experiment results over the entire Vds and Vgs range of operations.

关 键 词：DDDMOS 漂移电阻 宏模型 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]