GaN基功率型LED芯片散热性能测试与分析  

Thermal Dispersion of GaN-based Power LEDs

作　　者：钱可元[1] 郑代顺[1] 罗毅[1] 

机构地区：[1]清华大学深圳研究生院半导体照明实验室,广东深圳518055

出　　处：《半导体光电》2006年第3期236-239,共4页Semiconductor Optoelectronics

基　　金：国家"十五"科技攻关计划重大项目(2003BA316A01-01-02);深圳市科技计划项目

摘　　要：与正装LED相比,倒装焊芯片技术在功率型LED的散热方面具有潜在的优势。对各种正装和倒装焊功率型LED芯片的表面温度分布进行了直接测试,对其散热性能进行了分析。研究表明,焊接层的材料、焊接接触面的面积和焊接层的质量是制约倒装焊LED芯片散热能力的主要因素;而对于正装LED芯片,由于工艺简单,减少了中间热沉,通过结构的优化,工艺的改进,完全可以达到与倒装焊LED芯片相同的散热能力。In the aspect of thermal dispersion for power LEDs, flip-chip configuration has potential predominance. The temperature distribution of power LEDs is measured, and the performance of thermal dispersion is discussed. The analytical results show that the solder material,contact area and processing quality of solder layer will be main factors restricting the ability of thermal dispersion for flip-chip configuration LEDs. Meanwhile, the normal LED chips emitting light from p-side are possible to reach the same thermal dispersion performance as the flip-chip bonded LEDs through adopting appropriate bonding technique and optimizing chip structure.

关 键 词：功率型LED 倒装焊结构 散热性能 热阻 

分 类 号：TN312.8[电子电信—物理电子学]