CCD减薄技术研究  

CCD Thinned Technique

作　　者：钟四成[1] 邓艳红[1] 陈于伟[1] 汪凌[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2006年第3期297-299,共3页Semiconductor Optoelectronics

摘　　要：正面照射的CCD在蓝光、紫外光区和在微光条件下的响应率低,从而作为主探测器在天文观测和空间导航等领域中的应用受到限制。通过减薄CCD采用背面照射,能大幅度提高其量子效率。研究了一种新的化学/机械减薄技术,采用这种技术可使减薄后CCD器件厚度小于20μm,其量子效率由正面入射时的40%左右提高到背面入射时的80%左右。The applications of front-illuminated charge-coupled devices （CCDs） as the key detectors are limited in the fields of astronomical observation and aerial navigation, etc. due to lower blue and UV spectral response and weak light response. The thinning and back-illuminating make CCD improve significantly its quantum efficiency. A novel kind of chemical/mechanical thinning technology is proposed. By using this novel technology, the device thickness can be thinned to less than 20μm, and the quantum efficiency of CCDs can be greatly elevated from 40 % at front-illimunating to about 80% at back-illimunatint,.

关 键 词：电荷藕荷器件 减薄 铟柱倒焊 量子效率 

分 类 号：TN386.5[电子电信—物理电子学]