Si_3N_4膜对MOS电容器存储时间影响的研究  

Influence of Si_3N_4 Film on Storage Time of MOS Capacitor

作　　者：陈忠和[1] 许青[1] 高燕[1] 陈捷[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2006年第3期303-305,308,共4页Semiconductor Optoelectronics

摘　　要：Si3N4薄膜淀积速率对MOS电容器存储时间影响很大。在850℃下,栅介质SiO2膜厚度100 nm,MOS电容器存储时间420 s。在50 Pa真空压力下,通过淀积70 nm厚Si3N4薄膜后,MOS电容器无存储时间。经900℃O2气氛退火40 min,MOS电容器的存储时间也不到2 s。采用7孔径降低气体流速,从而降低淀积速率,在840℃下,栅介质SiO2膜厚度100 nm,MOS电容器存储时间420 s;在60.71 Pa真空压力下,淀积70 nm厚Si3N4薄膜后,MOS电容器存储时间曲线不正常,经900℃O2气氛退火40 min,曲线恢复正常,MOS电容器存储时间达到400 s以上。The influence of deposition rate exists because of its tensile stress, which can be of SisN4 film on storage time of MOS capacitor reduced by annealing. The storage time of MOS capacitor is 420 s before the Si3N4 film is deposited on SiO2 film thickness of 100 nm at 850 ℃. The storage time of MOS capacitor turns to zero after SisN4 film thickness of 70 nm is deposited at 850 ℃ and vacuum pressure of 50 Pa. The storage time is still less than 2 s even though the hybrid film is annealed by 40 min in the oxygen atmosphere at 900 ℃. By using the pore size of φ7 mm for reducing gas flow rate and deposition rate,the storage time of MOS capacitor is 420 s when SiO2 film thickness of 100 nm is deposited at 840 ℃. The curve of storage time will be abnormal after the Si3N4 film of 70 nm is deposited at vacuum pressure of 60.71 Pa,but the storage time of MOS capacitor can reach over 400 s after annealed by 40 min in the oxygen atmosphere at 900 ℃.

关 键 词：Si3N4薄膜 存储时间 退火 

分 类 号：TN386[电子电信—物理电子学]