用于1.5μmBiCMOS技术的SiGeHBT结构及工艺研究  

Study on the Structure of SiGe HBT and its Process for 1.5 μm-BiCMOS Technology

作　　者：李文杰[1] 王生荣[1] 戴广豪[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《微纳电子技术》2006年第7期329-332,共4页Micronanoelectronic Technology

摘　　要：基于非选择性外延,基极/发射极自对准和集电区选择性注入,提出了一种可用于1.5μmSiGeBiCMOS集成的HBT器件结构及其制作流程。并利用TSuprem4,Medici进行了工艺模拟和电学特性仿真。模拟结果表明,所设计的SiGeHBT具有良好的电学特性。当Vce为2.5V时,其最大电流增益为385,截止频率达到54GHz,验证了流程设计和器件结构的合理性。Based on the non-selective epitaxy, self-aligned base/emitter and selective implanted collector, a kind of SiGe HBT structure for 1.5 μm BiCMOS integration and corresponding process flow is presented. And simulations for the proposed SiGe HBT electric characteristics with TSuprem4 and Medici were done. The results illustrate excellent performances. In the condition of V∞=2.5 V, the maximum gain is 385, and cut-off frequency is 54 GHz, which proves the rationality of proposed flow and structure.

关 键 词：BICMOS SIGE HBT 非选择性外延 选择离子注入集电区 

分 类 号：TN323[电子电信—物理电子学]