开关电源芯片中过温保护技术的研究与实现  

The Research of Over-Temperature Protection Technology in Switch Power Supply Chips and Its Implementation

作　　者：邹雪城[1] 邵轲[1] 郑朝霞[1] 陈松涛[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《微电子学与计算机》2006年第7期192-194,共3页Microelectronics & Computer

摘　　要：在分析温度对开关电源芯片的可靠性、稳定性有严重影响的基础上,利用与绝对温度成正比的PTAT电流检测温度变化的原理,设计了一种新颖的过温保护电路。该电路具有迟滞功能,并且关断和开启阈值可调,同时输入电压变化对温度门限的影响很小。仿真波形显示该电路工作性能优异。最后该电路应用在DC-DC芯片中,采用1.6μmBiCMOS工艺,完全满足芯片设计需要,具有很大的应用前景。Based on the analysis of the great effect caused from temperature on the reliability and the stability of Switch Power Supply Chips, a Proportional to Absolute Temperature current-PTAT current is used to design an original over- temperature protection circuit. This circuit has the function of hysteresis, simultaneity, the threshold of shutdown and turn on temperature can be regulated and the change of temperature threshold caused from input voltage alter can be ignored. Simulation waveform shows that this circuit has perfect performance. At last, this circuit is used in a DC-DC chip based on a 1.6μm BiCMOS process and it can fully satisfy the chip needs. So this circuit will have an actually great prosperity.

关 键 词：过温保护技术 开关电源 PTAT电流 迟滞功能 

分 类 号：TN4[电子电信—微电子学与固体电子学]