V_2O_5薄膜的超声喷雾制备及其性能研究  

V_2O_5 Thin Films Prepared by Ultrasonic Spray Deposition Method and Their Properties

作　　者：黄岳文[1] 羊亿[1] 李华维[1] 刘敏[1] 罗友良[1] 

机构地区：[1]湖南师范大学物理与信息学院,湖南长沙410081

出　　处：《邵阳学院学报（自然科学版）》2006年第2期23-26,共4页Journal of Shaoyang University：Natural Science Edition

基　　金：教育部回国留学启动基金;湖南省教育厅青年项目(03B018)

摘　　要：采用超声喷雾法在玻璃衬底上制备了V2O5薄膜,研究了超声沉积参数对V2O5薄膜微结构以及薄膜晶化生长过程的影响.利用X射线衍射仪(XRD)扫描电子显微镜(SEM)分光光度计和电阻测量等手段对薄膜的晶相结构?表面形貌和性能进行了分析.XRD结果表明:V2O5薄膜为斜方晶系结构,当衬底温度(TS)小于215℃时,沉积的薄膜为非晶态;当TS≥215℃时,V2O5薄膜开始形成微晶结构,而且随着衬底温度上升,薄膜的择优取向由(001)方向向(110)方向发生了转变.SEM图谱显示了V2O5薄膜的沉积生长过程.当V2O5薄膜温度从室温升高至380℃时,薄膜电阻变化了将近2个数量级;该方法制备的V2O5薄膜光学能隙Eg=2.25eV.Thin films of vanadium pentoxide （V2O5 ） were grown on glass substrates by ultrasonic spray deposition method at various substrate temperatures（Ts） of 165,215, 265, 315, 365 and 415℃. We had analyzed the influence of deposition parameters on the structural features and surface morphology of vanadium pentoxide films. The properties of these films were investigated by X-ray diffraction （XRD）, scanning electron microscopy（SEM）, and spectrophotometry. X- ray characterization revealed that the structure of V2O5 was orthorhombic , V2O5 thin films deposited at Ts〈21512 were amorphous- like and deposited at Ts≥215℃ were polycrystalline. When deposited at 265℃ the films were oriented towards （001） plane, but when Ts= 415℃, the films were strongly oriented towards （110） plane. SEM micrograph displayed the process of growing of vanadium pentoxide films. Two order-of-magnitude drop of sheet resistance was observed when the films＇ temperature rose from room temperature to 380℃. Optical properties of V2O5 thin films were also investigated and the optical band gap（Eg） was found to be about 2.25eV.

关 键 词：V2O5薄膜 斜方晶系 超声喷雾 光电性能 

分 类 号：O484[理学—固体物理]