非对称绝缘层无机EL显示器件的研究  

Study on the Inorganic EL Devices with Asymmetric Insulating Layers

作　　者：肖田[1] 林明通[1] 陈国荣[1] 杨云霞[1] 徐毅 陈晨曦 楼均辉 

机构地区：[1]华东理工大学材料科学与工程学院,上海200237 [2]上海广电电子股份有限公司,上海200081

出　　处：《光电子技术》2006年第2期88-90,共3页Optoelectronic Technology

摘　　要：非对称绝缘层无机EL显示器件是一种新颖的器件结构。成功制备了一批ZnS：Mn器件，其下介质层为厚100-200nm的SrTiO3（ST）或Ba0．5Sr0．5TiO3（BST）或Ta2O5薄膜，上介质层为厚600～1100nm的Ta2O5或ST／Ta2O5或HfO2／Ta2O5／Al2O3薄膜。发现以ST／Ta2O5为上介质层的器件具有适当的阈值电压、较高的L50和较陡的L—V曲线，以HfO2／Ta2O5／Al2O3为上介质层的器件具有较高的可靠性。Novel EL devices with asymmetric insulating layers were prepared and the luminescent performance was investigated in this article. The lower dielectric layers were 100-200 nm thick SrTiO3（ST）, Ba0.5Sr0.5TiO3（BST） or Ta2O5 thin films, and the upper dielectric layers were 600- 1 100 nm thick Ta2O5, ST/Ta2O5 or HfO2/Ta2O5/Al2O3 thin films. The EL devices with ST/Ta2O5 as the upper insulating layer showed moderate threshold voltage and higher L50, while the devices with HfO2/Ta2O5/Al2O3 as the upper insulating layer exhibited higher reliability.

关 键 词：薄膜电致发光器件 不对称绝缘层 阚值电压 L—V曲线 

分 类 号：TN104.3[电子电信—物理电子学]