厚胶光刻非线性畸变的校正  

Precompensation for Nonlinear Distortion in Thick Film Photolithography

作　　者：唐雄贵[1] 姚欣[1] 高福华[1] 温圣林[1] 刘波[1] 郭永康[1] 杜惊雷[1] 

机构地区：[1]四川大学物理科学与技术学院,成都610064

出　　处：《光学学报》2006年第7期1032-1036,共5页Acta Optica Sinica

基　　金：国家自然科学基金(60276018);中国科学院光电所微细加工技术国家重点实验室资助课题

摘　　要：利用厚胶光刻技术制作大深度微结构元件是一种有效的途径,但厚胶光刻过程中的非线性畸变对光刻面形质量的严重影响限制了该技术的应用,基于此,提出了一种对掩模透射率函数进行校正的方法。分析空间像形成及其在光刻胶内传递、曝光、显影等过程中非线性因素的影响,利用模拟退火算法对掩模透射率函数进行校正,以提高光刻面形质量,并以凹面柱透镜为例,给出了校正前后的显影轮廓模拟结果,其校正后浮雕面形的体积偏差仅为2.63%。该方法在有效改善面形质量的同时,并没有引起掩模的设计、制作难度及费用增加,这对于设计、制作高质量的微结构元件有重要意义。Fabrication of large depth microstructure by using thick film photolithography-technology is a considerable option, but effect of nonlinear distortion on the photolithography surface profile quality severely limits its application. For the above reason, a method to correct mask transmissivity function is proposed. The influences of nonlinear factors such as spatial imaging, propagation, exposure and development process are analyzed. Then, by utilizing the simulated annealing algorithm, transmissivity function of mask is optimized to improve the quality of surface profile of photolighography. Taking a concave cylinder lens as example, the simulated results of developed profile before and after correction are presented, and the volume deviation of profile after correction is only 2.63 %. This method obviously improves the quality of surface profile, but does not increase difficulty of design and fabrication of the mask and expense, which is very useful to fabricate microstructure with high fidelity.

关 键 词：物理光学 厚胶光刻 模拟退火算法 非线性畸变 校正 体积偏差 

分 类 号：TN305.7[电子电信—物理电子学]