Au/(C/SiO_2)/p-Si结构中的电流输运机理研究  

Study on the current transport mechanisms of the structure Au/(C/SiO_2)/p-Si

作　　者：张汉谋[1] 马书懿[1] 

机构地区：[1]西北师范大学物理与电子工程学院,甘肃兰州730070

出　　处：《西北师范大学学报（自然科学版）》2006年第4期44-46,52,共4页Journal of Northwest Normal University(Natural Science)

基　　金：国家自然科学基金资助项目(60276015);教育部科学技术研究项目(204139);甘肃省教育厅科研资助项目(0501-04);甘肃省高分子材料重点实验室开放基金资助项目

摘　　要：采用射频磁控溅射方法制备了镶嵌纳米碳粒的SiO2薄膜,利用Au/(C/SiO2)/p-Si结构的I-V特性曲线,对其电流输运机理进行了分析.结果表明,正向偏压较小时,薄膜中的电流符合欧姆电流输运机制;正向偏压较大时,薄膜中的电流主要是Schottky发射和Frenkel-Poole发射2种电流输运机制的共同作用结果.这一结论与样品的EL(electroluminescence)是由SiO2中的发光中心引起的结论相一致.The nano-C particles embedded SiO2 films are fabricated by the RF magnetron sputtering method. The current transport mechanisms are analyzed by the I-V characteristics curve. The result indicates that the current in the film is in accord with the ohm current mechanism under the lower forward bias voltage, and that is the together result of both Schottky emission current and Frenkel-Poole emission current contribution under the higher forward bias voltage. The conclusion is consistent with the EL of the film which originates from the luminescence centers in SiO2.

关 键 词：射频磁控溅射 I-V特性 Schottky发射 Frenkel-Poole发射 

分 类 号：O484.42[理学—固体物理]