真空蒸发法制备SnS薄膜及其光电性能研究  

Characterization of the SnS Thin Films Deposited by Vacuum Evaporation

作　　者：邱永华[1] 史伟民[1] 魏光普[1] 徐环[1] 林飞燕[1] 

机构地区：[1]上海大学材料科学与工程学院,上海200072

出　　处：《光电子．激光》2006年第7期817-820,827,共5页Journal of Optoelectronics·Laser

基　　金：上海市重点资助项目(03DZ12033)

摘　　要：采用真空蒸发法，在载玻片上制备了SnS薄膜。分析表明，此法制备的SnS薄膜的导电类型为P型，在（111）晶面上有很强的择优取向；其晶粒呈棒状，平均长度约为0．2～0．3μm，薄膜中的S与Sn原子非常接近化学计量比，在吸收边附近薄膜的吸收系数约为10^5cm^-1，光学能隙Eg约为1．35eV，电阻率约为240Ω·cm，比其它方法制备的SnS薄膜，其在光学与电学性能上有较大的改善，更适合做薄膜太阳能电池的吸收层。成功制备出了ITO／p-SnS／n-Si／Ag结构的太阳电池，其光电转换效率达0．71％。Thin films of SnS were deposited by means of vacuum evaporation. The hot probe method showed invariably p-type nature for all the deposited films. The samples have been characterized with XRD and SEM for structural analysis. The films were found to be polycrystalline and stoichiometric with a strong （111） preferred orientation, and the grain size was about 0.2-0.3 μm. The SnS thin films had a resistivity of 2.4 × 102 Ω · cm. The absorption coefficients of the films were an order of 10^5 cm^-1 at the fundamental absorption edge. The optical energy band gap of the films was 1.35 eV. These p-type SnS thin films could find application as absorber layers in thin film solar cells,and we have developed a formation of ITO/p-SnS/n-Si/Ag solar cell,the fill factor FF of this cell is 0.51, the PV conversion coefficiency is 0.71%.

关 键 词：SNS 薄膜 真空蒸发法 太阳电池 

分 类 号：O484.4[理学—固体物理]