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作 者:TIAN Wen-miao YANG Feng GAO Li-yan WANG Guang-gang LIU Shi-hua LIU Jie
机构地区:[1]College of Physics and Electronics [2]College of Information Science and Engineering Shandong Normal University, Jinan 250014, CHN
出 处:《Semiconductor Photonics and Technology》2006年第3期145-149,共5页半导体光子学与技术(英文版)
基 金:NaturalScienceProjectsfromEducationDepartmentofShandongProvince(J05G01)
摘 要:The passively Q-switched and mode-locked(QML) characteristics in a diode-pumped Nd∶GdVO4 laser with Cr4+∶YAG saturable absorbers have been demonstrated. A maximum average output power of 710mW has been obtained in the QML laser. The maximum energy of a single Q-switched pulse is 52.5μJ, with the corresponding pulse width of 30ns and the peak power of 1.75kW, at the incident pump power of 7.75W. The repetition rates of the Q-switched envelope and the mode-locked laser pulse are 16.7kHz and 680MHz, respectively.The passively Q-switched and mode-locked (QML) characteristics in a diode-pumped Nd: GdVO4 laser with Cr^4+: YAG saturable absorbers have been demonstrated. A maximum average output power of 710 mW has been obtained in the QML laser. The maximum energy of a single Q-switched pulse is 52.5μJ, with the corresponding pulse width of 30 ns and the peak power of 1.75 kW, at the incident pump power of 7. 75 W. The repetition rates of the Q-switched envelope and the mode-locked laser pulse are 16.7 kHz and 680 MHz, respectively.
关 键 词:Cr^4+: YAG crystal Nd: GdVO4 crystal Q-switched and mode-locked laser
分 类 号:TN248.1[电子电信—物理电子学]
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