DBDCVD法制备a-Si:H的性能研究  

Properties of a-Si∶H Prepared by DBDCVD

作　　者：陈萌炯[1] 张溪文[1] 郭玉[1] 王薇薇[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《材料科学与工程学报》2006年第4期555-557,共3页Journal of Materials Science and Engineering

基　　金：国家高技术研究发展计划资助项目(2001AA320202);国家自然科学基金资助项目(50372060)

摘　　要：本文用介质阻挡放电化学气相沉积(DBDCVD)在室温下进行了非晶氢硅薄膜制备。通过硅烷氢气流量比、DBD放电电压等工艺条件的调整,在玻璃上沉积了系列样品。研究表明,DBDCVD法可以在室温下快速制备非晶氢硅薄膜,最大沉积速率可达0.34nm/s,由于DBDCVD的高能量和室温沉积的特点,薄膜中硅-氢键以SiH2为主。随硅烷反应气体浓度的变化,薄膜的光学带隙可在1.92eV^2.18eV之间调整。a-Si：H films were prepared on glass substrates by Dielectric Barrier Discharge Chemical Vapour Deposition （DBDCVD） at room temperature. A series of the samples were deposited by varying the deposition parameters such as the specific flux of SiH4/H2 and the discharge voltage of DBD. The results show that DBDCVD can be used to prepare a-Si： H films with a high deposition rate up to 0.34 nm/s at room temperature. Because of the high energy of DBDCVD and the deposition at room temperature, SiH2 is the main bonding configuration of the Si-H bonds in the films. With changing SiH4 concentration, the band gap of the films can be adjusted between 1.92 eV and 2.18 eV.

关 键 词：非晶硅 硅氢键 DBDCVD 

分 类 号：TB43[一般工业技术]