源气体流量比对a-C:F:N薄膜的影响  

Influence of Source Gas Flow Ratios on a_-C:F:N Films

作　　者：张云芳[1] 

机构地区：[1]江苏科技大学数理学院,江苏镇江212003

出　　处：《材料科学与工程学报》2006年第4期611-613,共3页Journal of Materials Science and Engineering

摘　　要：以CF4、CH4和N2的混合气体为源气体，利用rf-PECVD沉积技术制备了氮掺杂氟化非晶碳（a_C：F：N）薄膜，研究了源气体流量比对a_C：F：N薄膜沉积速率和结构的影响。用椭圆偏振光谱测试仪测量了薄膜厚度，结合沉积时间计算了薄膜的沉积速率（在18～21nm／min之间），随流量比增大，薄膜的沉积速率先升高后降低。FTIR光谱分析表明，随流量比增大，薄膜中含F量降低，交联结构增强。Raman光谱分析发现，薄膜中的碳原子由sp^2和sp^3两种组态的混合结构组成，并进一步证明，随流量比增大，薄膜中sp^2键含量增加，交联程度增强。The a_ C：F： N film was prepared with the method of rf-PECVD using CF4, CH4 and N2 as source gases. The effects of source gas flow ratio on depositional rate and microstructure of a_ C：F： N films were investigated. The thickness of the films were measured with ellipsometer. The depositional rate of the film increases with the flow ratio of source gas firstly, and then decreases within the range of （ 18 - 21 ） nm/min. The result of FTIR spectrum analysis shows that the content of F in the film decreases and the cross linked structure is enhanced with the increase of the flow ratio. Through Raman spectrum analysis, we discover that the carbon atom in film is consisted of mixed sp^2 and sp^3 bonds, which further proves that the content sp^2 in the film increases and the cross linked structure is enhanced with the increase of the flow ratio.

关 键 词：流量比 氮掺杂氟化非晶碳薄膜 拉曼光谱 

分 类 号：TB43[一般工业技术] O484[理学—固体物理]