多晶FeS_2薄膜电学性能的研究与进展  

Research and development of electrical properties of polycrystalline FeS_2 thin films

作　　者：井源源[1] 刘艳辉[1] 孟亮 

机构地区：[1]浙江大学金属材料研究所,浙江杭州310027

出　　处：《功能材料信息》2006年第3期38-42,共5页Functional Materials Information

基　　金：浙江省自然科学基金资助项目(Y405016)

摘　　要：FeS2薄膜是极具研究价值的光电转换材料,改善光电转换效率是主要研究方向,而进一步阐明电传导规律和机制是探索改善FeS2薄膜光电转换效率有效途径的前提之一。本文概述了FeS2薄膜电学性能的研究进展,分析了硫化制备工艺及掺杂效应对FeS2薄膜电学性能的影响,介绍了晶界势垒模型、跳跃传导模型及晶体点缺陷理论等FeS2薄膜电传导相关机制,讨论了FeS2薄膜存在的问题及发展方向。Improving the photoelectric transformation efficiency is the key to the practical application of FeS2 thin films as a promising photoelectric conversion material. Therefore, the electrical properties and the mechanisms responsible for electronic transport in FeS2 thin films should first be understood in order to seek effective ways to the improvement of photoelectric transformation efficiency. In this paper, the research status and development in the electrical properties of FeS2 thin films were reviewed. The electrical properties dependent on the preparation processes of sulfurizing and doping were introduced. Some theoretical models, such as the theory of grain boundaries,hopping mechanism and the theory of point defects, related to the electron transport mechanisms were discussed. Some suggestions for the further research in the electrical characterization were also made.

关 键 词：FES2薄膜 电学性能 工艺参数 晶体缺陷 

分 类 号：TN304[电子电信—物理电子学]