650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer  

作　　者：XIA Wei LI Shu-qiang WANG Ling MA De-ying ZHANG Xin WANG Fu-xun JI Gang LIU Ding-wen REN Zhong-xiang XU Xian-gang MEI Liang-mo 

机构地区：[1]Shandong University, Ji＇nan 250100, China [2]Shanclong Huaguang Optoelectronics Co. Ltd., Ji＇nan 250101, China

出　　处：《Optoelectronics Letters》2006年第4期263-265,共3页光电子快报（英文版）

摘　　要：650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth.The threshold current is 6.4 mA,at 40 mA CW operation,the fundamental transverse-mode still remains,and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively.The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA.During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8%.650 nm AIGalnP/GalnP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth. The threshold current is 6.4 mA,at 40 mA CW operation, the fundamental transverse-mode still remains, and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively. The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA. During 200 h burn in test,the laser diodes show good stabilization with a degradation of less than 8 %.

关 键 词：GalnP/AIGalnP 激光二极管 功率输出 饱和电流 

分 类 号：TN248.4[电子电信—物理电子学]