Development in Laser Induced Extrinsic Absorption Damage Mechanism of Dielectric Films  

作　　者：夏志林 邓德刚 范正修 邵建达 

机构地区：[1]Shanghai Institution of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 [2]Graduate School of the Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2006年第8期2179-2182,共4页中国物理快报（英文版）

摘　　要：Absorption of host and the temperature-dependence of absorption coefficient have been considered in evaluating temperature distribution in films, when laser pulse irradiates on films. Absorption of dielectric materials experience three stages with the increase of temperature： multi-photon absorption; single photon absorption; metallic absorption. These different absorption mechanisms correspond to different band gap energies of materials, which will decrease when the temperature of materials increases. Evaluating results indicate that absorption of host increases rapidly when the laser pulse will be over. If absorption of host and the temperature-dependence of absorption are considered, the maximal temperatures in films will be increased by a factor of four.Absorption of host and the temperature-dependence of absorption coefficient have been considered in evaluating temperature distribution in films, when laser pulse irradiates on films. Absorption of dielectric materials experience three stages with the increase of temperature： multi-photon absorption; single photon absorption; metallic absorption. These different absorption mechanisms correspond to different band gap energies of materials, which will decrease when the temperature of materials increases. Evaluating results indicate that absorption of host increases rapidly when the laser pulse will be over. If absorption of host and the temperature-dependence of absorption are considered, the maximal temperatures in films will be increased by a factor of four.

分 类 号：O48[理学—固体物理]