Effects of Post-Thermal Treatment on Quality of SiC Grown by PVT Method  

作　　者：朱丽娜 陈小龙 杨慧 彭同华 倪代秦 胡伯清 

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080

出　　处：《Chinese Physics Letters》2006年第8期2273-2276,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 50132040 and 50302014, the National Basic Research Program of China, and the Knowledge Innovation Project of Chinese Academy of Sciences.

摘　　要：We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.We report the effects of post-thermal treatment on the quality of 2-inch 6H-SiC wafer cut from a crystal boule grown by physical vapour transportation method. The full widths at half maximum of x-ray diffraction rocking curves measured on sites across the 2-inch wafer become narrower, indicating the quality improvement after a three-step post-thermal treatment. It is found that the most common defects such as micropipes and inclusions can be significantly reduced after the treatment. Our results show that the post-thermal treatment is an effective route to improve the quality of SiC single crystals.

关 键 词：CARBIDE SINGLE-CRYSTALS SILICON-CARBIDE SUBLIMATION GROWTH VAPORTRANSPORT DEFECTS INGOTS 

分 类 号：O484[理学—固体物理] O7[理学—物理]