Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition  

作　　者：关丽 张端明 李智华 谭新玉 李莉 刘丹 房然然 刘高斌 胡德志 

机构地区：[1]Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 [2]College of Physics Science and Technology, Hebei University, Baoding 071002

出　　处：《Chinese Physics Letters》2006年第8期2277-2280,共4页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant No 50272022, and Sunshine Foundation of Wuhan City （No 20045006071）.

摘　　要：Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition （PLD）. Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.

关 键 词：MONTE-CARLO-SIMULATION EARLY-STAGE TEMPERATURE DEPENDENCE SURFACE 

分 类 号：O484[理学—固体物理] TN24[理学—物理]