含纳米硅氧化硅薄膜的光致发光特性  

Study on the Property of the Photoluminescence from Silicon Oxide Films Embedded Nanometer Silicon Particles

作　　者：杨琳琳[1] 郭亨群[1] 

机构地区：[1]华侨大学信息科学与工程学院,福建泉州362021

出　　处：《华侨大学学报（自然科学版）》2006年第3期256-258,共3页Journal of Huaqiao University(Natural Science)

基　　金：国家自然科学基金资助项目(60336010)

摘　　要：利用射频磁控溅射复合靶技术,通过调节复合靶的百分比制得富硅的氧化硅薄膜,并在不同的温度下退火,制得含纳米硅的氧化硅薄膜.通过Raman谱的测量,计算出800℃退火的薄膜中纳米硅晶粒的平均尺寸为5.6 nm,用X射线衍射测量同样的样品得出其粒径为6.0 nm.在室温下测量光致发光(PL)谱,探测样品的峰位为360 nm,并结合光致发光激发谱(PLE),研究相应的激发与发光中心.Si-rich silica were deposited by RF magnetron sputtering through changing the content rate on composite targets. The silicon oxide films embedded by nanometer silicon particles were prepared at different annealed temperature. The average size of the nanometer particle was 5.6 nm calculated by Raman scattering at 800 ℃ annealed temperature and this size was 6.0 nm measured by XRD. The photoluminescence spectra were found to have the peak at 360 nm at room temperature and the corresponding exciting and luminescence centre were studied combining the photoluminescence spectrum.

关 键 词：磁控溅射 纳米硅 光致发光 氧化硅薄膜 

分 类 号：O484.41[理学—固体物理] TB383[理学—物理]