Cr,Fe,Cu/Al_2O_3界面化学结构的光电子能谱  

The Chemical Structure of Cr,Fe,Cu/Al_2O_3 Interface by XPS

作　　者：任海兰[1] 刘韩星[1] 张汉林[1] 欧阳世翕[1] 王典芬[2] 

机构地区：[1]武汉工业大学新材料研究所,武汉430070 [2]武汉工业大学测试中心,武汉430070

出　　处：《物理化学学报》1996年第10期900-904,共5页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金;国家高技术基金

摘　　要：应用X－射线光电子能谱，通过离子刻蚀，原位研究第四周期过渡金属与氧化铝所形成界而的化学状态．结果表明，Cr、Fe在界面处有不同程度的氧化，氧化程度Cr＞Fe，而Cu则无明显氧化．化学成份的定量分析表明，界面过渡层的厚度与界而化学反应强弱直接相关．The chemical states of metal-ceramic interface were studied by XPS accompany the ion etching in situ. The results showed that Cr and Fe were both oxidized at the interfaces, and the degree of the oxidization was Cr>Fe, while Cu was not oxidized.The quantity analysis showed that the thickness of the interfaces had a direct relations with the chemical reaction.

关 键 词：金属 陶瓷 界面 光电子能谱 化学结构 

分 类 号：O647.1[理学—物理化学]