ZnO/PS异质结的光学和电学性质  

Optical and Electrical Properties of ZnO/PS Heterostructure

作　　者：赵波[1] 李清山[1] 张宁[1] 陈达[1] 郑学刚[1] 

机构地区：[1]曲阜师范大学物理工程学院,曲阜273165

出　　处：《Journal of Semiconductors》2006年第7期1217-1220,共4页半导体学报（英文版）

基　　金：山东省自然科学基金资助项目(批准号:Y2002A09)~~

摘　　要：用脉冲激光沉积的方法在多孔硅(PS)衬底上沉积ZnO薄膜,在室温下测量了ZnO/PS异质结的结构及光学和电学性质.X射线衍射仪和扫描电子显微镜测量表明,制备的ZnO薄膜具有一定的c轴取向,但薄膜存在较多缺陷.光致发光谱显示,PS的发光与ZnO的发光相叠加,呈现白光发射.对异质结I-V特性曲线的测量表明,异质结呈现出与普通二极管不同的整流特性,其反向电流不饱和,据此提出了能带模型.The optical and electrical properties of ZnO/porous Si （PS） heterostructure are studied. The PS sample is formed by the anodization of a single-crystal Si wafer. ZnO films are then deposited on the PS substrate by pulsed laser deposition. White light formed by combining the red emission from the PS layers with the blue-green emission from the ZnO films is obtained. Due to the roughness of the PS surface,some cracks appear in the ZnO films,which can be seen from the SEM spectra. The I-V characteristics of the ZnO/PS heterostructure are different from those of the common diode,whose reverse current is not saturated. Based on the I-V characteristics,an energy band diagram is proposed.

关 键 词：白光发射 多孔硅 ZnO光致发光 能带模型 

分 类 号：TN304[电子电信—物理电子学]