电子束蒸发非晶硅光学薄膜工艺研究  

Process Investigation of Electron Beam Evaporation Deposited Amorphous Silicon Optical Films

作　　者：舒雄文[1] 徐晨[1] 田增霞[1] 罗丹[1] 沈光地[1] 

机构地区：[1]北京工业大学光电子技术实验室,北京100022

出　　处：《光电子．激光》2006年第8期905-908,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"基金资助项目(G200068302);北京市科委基金资助项目(D0404003040221);北京市教委基金资助项目(KM200310005009)

摘　　要：研究了沉积时真空室真空度、基片温度和沉积速率对常用电子束蒸发非晶硅（a-Si）光学薄膜的折射率和消光系数的影响。结果表明，在300～1100nm的波长范围内，真空室真空度、基片温度和沉积速率越高，则所得a-Si薄膜折射率越高，消光系数越大。并将实验结果用于半导体激光器腔面高反镜用a—Si膜镀制，发现在选择初始真空为1E-6×133 Pa、基片温度为100℃和沉积速率为0．2nm／s时所得高反镜的光学特性比较好，在808nm处折射率和消光系数分别为3．1和1E-3。The paper investigated the effect of the process parameters, such as chamber pressure,substrate temperature and deposition rate,on the optical characteristics of electron beam evaporation deposited amorphous silicon optical film. It was found that the refractive index and extinction coefficient of the film increased with the increase of the vacuum,substrate and deposition rate in the wavelength range of 300～ 1 100 nm. The results were applied to the deposition of high reflection mirror of semiconductor, and the refractive index of 3.1 and extinction coefficient of 1E-3 at 808 nm,were obtained with the base vacuum of 1E-6× 133 Pa,the temperature of 100 ℃ and the deposition rate of 0.2 nm.

关 键 词：非晶硅(a—Si) 光谱椭偏仪 折射率 消光系数 半导体激光器 

分 类 号：O484.1[理学—固体物理] O484.4[理学—物理]