FM20L08型铁电存储器的原理及应用  

Principle and application of FRAM memery FM20L08

作　　者：安文书[1] 陈雷[1] 盖希强[1] 任新智[1] 

机构地区：[1]军械工程学院弹药工程系,河北石家庄050003

出　　处：《国外电子元器件》2006年第6期52-55,共4页International Electronic Elements

摘　　要：本文主要介绍了铁电存储器FM20L08的原理及应用。该存储器不仅克服了EEPROM和Flash存储器写入时间长、擦写次数少等缺点,而且增加了电压监控器和软件控制的写保护功能,1MB的存储容量足以替代静态随机存储器。介绍FM20L08的引脚功能和工作原理,并在此基础上给出基于FM20L08的高速数据存储系统的设计方案及与单片机的接口电路。In this paper, features and application of FRAM memory FM20L08 are introduced.FM20L08 not only features the virtue of unlimited read/write cycles and no delay write,but also features of write protect low voltage lockout and software programmable block .1M byte wide memory logically organized as 131,072×8 has been designed to be a drop-in replace for standard SRAMs .The pin description and some operations are introduced. The method of designing the interface circuit between the FM20L08 and the MCU for high speed data recorder is described.

关 键 词：铁电存储器 FM20L08 高速数据记录 应用 

分 类 号：TN409[电子电信—微电子学与固体电子学]