电化学脉冲腐蚀制备均匀发光多孔硅  

Preparation of Uniformly Luminescence Porous Silicon by Pulsed Electrochemical Etching Method

作　　者：朱会丽[1] 尹延锋[1] 兰燕娜[1] 莫育俊[1] 

机构地区：[1]河南大学光学与光电子技术研究所,河南开封475001

出　　处：《河南大学学报（自然科学版）》2006年第2期47-49,共3页Journal of Henan University:Natural Science

基　　金：国家自然科学基金项目(10274019)

摘　　要：采用脉冲腐蚀和直流电化学腐蚀两种方法制备多孔硅,对这两种方法制备的多孔硅样品进行了扫描电镜和荧光光谱测量,发现脉冲腐蚀制备的多孔硅样品比直流腐蚀制备的多孔硅样品表面均匀、硅丝或者硅柱的尺寸较小、发光强度大,而且发光峰位有明显.的蓝移现象.同时我们还发现多孔硅样品的尺寸越小其能带越宽,由此得出多孔硅样品的发光现象符合量子限域解释的多孔硅的发光机制.Porous Silicon （PS） was prepared by pulsed and DC electrochemical etching method under the same etching conditions. The scanning electron microscopy （SEM） and the photoluminescence（PL）observation showed that the porous Silicon surface prepared by pulsed etching was more uniform and the Silicon particles were smaller. The intensity of PL was enhanced. At the same time, we observed that the smaller the dimension of the PS, the broader energy gap of the PS. It concluded that the PL of our samples accorded with the mechanism of quantum confinement effect.

关 键 词：多孔硅 脉冲腐蚀 荧光 直流腐蚀 电镜 

分 类 号：O646.6[理学—物理化学]