单体对大气下沉积SiO_(x)薄膜的性能研究  

Investigation of SiO_x Films Synthesized with Different Precursors at Atmospheric Pressure

作　　者：汤文杰[1] 韩尔立[1] 陈强[1] 葛袁静[1] 

机构地区：[1]北京印刷学院印刷包装材料与技术北京市重点实验室等离子体物理与材料研究室,北京102600

出　　处：《包装工程》2006年第4期56-58,共3页Packaging Engineering

基　　金：北京市教委项目;北京印刷学院引进人才基金的资助

摘　　要：在大气压下,利用工作在16kHz的介质阻挡放电(DBD)等离子枪,以氩气为工作气体,分别用四甲基硅氧烷(TEOS)、六甲基硅氧烷(HMDSO)和八甲基环四硅氧烷(D4)为单体,通过改变载气流量、等离子体放电功率等研究聚合S iOx薄膜的结构性能影响。采用红外光谱(FTIR)分析所沉积S iOx薄膜的结构,通过接触角测试了解其表面亲/疏水性能。At atmospheric pressure, SiO, films were deposited by using DBD plasma gun in different precursors （TEOS, HMDSO, and D4） with Ar as carrier gas in 16 kHz high voltage power. The effects of plasma power and flow rate of carrier gas on the film properties were investigated. The structure of deposited films was characterized with Fourier transform infrared （ FTIR）, and the contact angle measurement was taken to reveal the film hydrophilic or hydrophobic features.

关 键 词：大气压DBD SIOX 单体 

分 类 号：TQ325[化学工程—合成树脂塑料工业] TB484[一般工业技术—包装工程]