硅光电二极管作为CsI（Tl）晶体读出元件的实验研究  

Experimental Studies on Using Silicon Photodiode as Read-out Component of CsI (Tl) Crystal

作　　者：何景棠[1] 陈端保[1] 李祖豪[1] 毛裕芳[1] 董晓黎[1] 

机构地区：[1]中国科学院高能物理研究所

出　　处：《高能物理与核物理》1996年第10期890-893,共4页High Energy Physics and Nuclear Physics

摘　　要：报道了硅光电二极管作为ＣｓＩ（Ｔｌ）晶体读出元件的实验研究．测量了日本Ｈａｍａｍａｔｓｕ生产的两种硅光电二极管的读出性能，包括能量分辨率与偏压、成形时间、灵敏面积和晶体尺寸的关系．In this paper, experimental studies on using silicon photodiode as the read-out component of CsI(Tl) Crystal are reported.The read-out properties of two different types of silicon photodiode produced by Hamamatsu were measured, including relations between energy resolution and bias,shaping time, sensitive area of photodiode and the dimension of the crystal.

关 键 词：硅光电二极管 CsI晶体 能量分辨率 闪烁体 

分 类 号：TL812.1[核科学技术—核技术及应用]