用于高分辨率光谱研究的窄线宽半导体激光器及其特性研究  

A Narrow Linewidth Diode Laser for High Resolution Spectroscopy and Its Properties

作　　者：陈徐宗[1] 姚继良[1] 李义民[1] 杨东海[1] 王义遒[1] 

机构地区：[1]北京大学电子学系

出　　处：《光学学报》1996年第10期1383-1388,共6页Acta Optica Sinica

基　　金：国家自然科学基金

摘　　要：报道了一种新型结构的弱反馈外腔半导体激光器，利用此结构将原来的激光线宽压窄至５００ｋＨｚ以下。这种激光器可用于高分辨率激光光谱、磁光阱囚禁原子和原子喷泉量子频标等方面。另外还从理论上研究了其线宽、电调率等物理参量间的关系，得出了有用的关系式。A narrow band diode laser with novel structure of external cavity is reported in this paper. With weak optical feedback, the laser linewidth was narrowed to below 500 kHz. This diode laser can be used for the study of high resolution spectroscopy, magnetic optical trap and atomic fountain frequency standards etc. In addition, we studied theoretically and experimentally the relation between linewidth and current tuning rate in detail. The obtained formula was proved by means of saturated spectroscopy.

关 键 词：高分辨光谱 半导体激光器 弱反馈 线宽 

分 类 号：TN248.4[电子电信—物理电子学]